Method of manufacturing capacitive element with a non-doped semiconductor film to minimize native oxide formation

摘要

One electrode of a capacitive element is formed by a doped semiconductor film and a non-doped semiconductor film which covers at least part of the doped semiconductor film, and a capacitive dielectric film is formed to cover these semiconductor films. In forming this capacitive dielectric film, enhanced oxidation due to impurities is suppressed, so hardly any native oxide is formed on the surface of one electrode, and a reliable capacitive element having a large capacitance can be manufactured.