发明名称 Single crystal pulling method
摘要 After whole raw material filled in a crucible is melted by plural heaters provided around the crucible, outputs of the heaters are lowered so that molten liquid is maintained at a predetermined temperature. A seed crystal is brought into contact with a surface of the molten liquid, and while a height of the surface of the molten liquid is being maintained in a heating region of a topmost heater, a pulling shaft is pulled up at a predetermined speed so that a single crystal is grown in a lower position of the seed crystal. At this time, in order that the pulled single crystal has required oxygen concentration during the pulling of the single crystal, a ratio of the output of the topmost heater to the outputs of all the heaters is set to a value calculated by RPW>/=0.88RT (RPW: output ratio of the topmost heater) based on the ratio RT of the height of the topmost heater to the height of the crucible.
申请公布号 US6080238(A) 申请公布日期 2000.06.27
申请号 US19980144650 申请日期 1998.08.31
申请人 SUMITOMO SITIX CORPORATION 发明人 ITO, MAKOTO
分类号 C30B15/14;C30B15/20;H01L21/208;(IPC1-7):C30B15/20 主分类号 C30B15/14
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