发明名称 |
Method of depositing titanium nitride thin film and CVD deposition apparatus |
摘要 |
A method for fabricating a titanium nitride thin film in a reaction vessel on a surface of a substrate heated to a prescribed temperature, includes the steps of mixing tetrakis(dialkylamino)titanium (TDAAT) and a first carrier gas to create a first mixed gas; feeding the first mixed gas into the reaction vessel through a first set of nozzles; mixing an added gas reactive with the tetrakis(dialkylamino)titanium with a second carrier gas to create a second mixed gas; feeding the second mixed gas into the reaction vessel through a second set of nozzles; while controlling the flow rates of the TDAAT, added gas, firt and second carrier gases; and depositing a titanium nitride thin film by the first mixed gas and the second mixed gas while confining the pressure inside the reaction vessel to a range of 0.1-15 Pa.
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申请公布号 |
US6080446(A) |
申请公布日期 |
2000.06.27 |
申请号 |
US19980063274 |
申请日期 |
1998.04.21 |
申请人 |
ANELVA CORPORATION |
发明人 |
TOBE, RYOKI;TANAKA, YASUAKI;SEKIGUCHI, ATSUSHI;JIMBA, HITOSHI;KIM, SO WON |
分类号 |
C23C16/34;C23C16/44;C23C16/455;H01L21/285;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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