| 摘要 |
PROBLEM TO BE SOLVED: To obtain an FeSi2 film of aβphase as-deposited on a substrate at a low substrate temp. regardless of the kinds of substrate material by using an FeSi2 alloy contg. a specified atomic ratio of Fe and Si as a target material and forming a film by pulse laser abrasion using a laser of wavelength in an ultraviolet light region at the substrate temp. equal to or below the specified one. SOLUTION: An FeSi2 alloy in which the atomic ratio of Fe to Si is 1:2 and produced by a melting method or a sintering method is used as a target material and is irradiated with an ArF excimer laser or the like at <=500 deg.C substrate temp. The laser fluence F is preferably controlled to 1.5 to 5 J/cm2. In the case of an ArF laser, aβ-FeS2 film free from droplets can be obtd. at 2 to 4 Jean. Preferably, the laser incident angle to the target is controlled to 45 degrees, the repeated frequency to 10 Hz, and the pressure in a film forming chamber to <=10-6 Torr. A ceramics substrate, a metallic substrate or the like can be used in addition to an Si (100) substrate and an Si (111) substrate.
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