| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma CVD device capable of forming a film of high quality on a substrate. SOLUTION: This device is provided with a reaction vessel 21, a grounded electrode 23 arranged in the reaction vessel 21 and to be mounted with the substrate 22 to be treated, a plasma electrode 25 arranged oppositely to the grounded electrode 23 in the reaction vessel 21 and a gas feeder 26 arranged in the reaction vessel 21 and feeding gas to the side of the plasma electrode 25, the gas feeder 26 has a gas mixing box 27 in which the side of the plasma electrode 25 is opened and a sticking preventive board 28 arranged at the opening part of the box 27 and prescribing a discharge region, and the distance between the plasma electrode 25 and the sticking preventive board is 1 to 5 mm.
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