发明名称 |
All optics type semiconductor image storage apparatus, and all optics type semiconductor logical operation apparatus |
摘要 |
An all optics type semiconductor image storage apparatus includes a superlative semiconductor device. The superlattice semiconductor device includes a superlattice layer which is formed by alternately laminating a barrier layer and a quantum well layer. The superlattice layer is interposed between two carrier confinement layers, one of which is formed on a surface of a semiconductor substrate. The superlattice semiconductor device has an effect of modulating a light absorbance in the vicinity of an absorption edge by canceling an internal electric field generated by a piezoelectric effect. This piezoelectric effect is due to a distortion occurring when the superlattice layer is formed. An image is stored so that, light incident into the superlattice semiconductor device at a first stable point is substantially transmitted, while light incident into the device at a second stable point is prevented from being substantially transmitted.
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申请公布号 |
US6081470(A) |
申请公布日期 |
2000.06.27 |
申请号 |
US19970837473 |
申请日期 |
1997.04.18 |
申请人 |
ATR OPTICAL & RADIO COMMUNICATIONS RESEARCH LABORATORIES |
发明人 |
VACCARO, PABLO;FUJITA, KAZUHISA;HOSODA, MAKOTO;WATANABE, TOSHIHIDE |
分类号 |
G02F1/355;G02F3/00;G02F3/02;H01L27/15;H01L29/06;H01L29/15;H01L29/66;H01L31/0352;H01L31/16;H01L31/18;H03K19/14;(IPC1-7):G11C7/00 |
主分类号 |
G02F1/355 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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