发明名称 Overlay alignment measurement of wafers
摘要 The present invention is a method and apparatus that uses a microscopic height variation positioned relative to a semiconductor device to scan a target on the device to produce an electrical signal representative of height variations of first and second periodic structures of the target in a selected path across the device, and a computing and control system to provide translation between the microscopic height variation detector and the target on the device in a selected path, and to calculate any offset between the first periodic structure and the second periodic structure of the target from the electrical signals from the microscopic height variation detector. The first periodic structure of the target is on a first layer of the device, and the second periodic structure, that complements the first periodic structure, is on a second layer of the device at a location that is adjacent the first periodic structure.
申请公布号 US6079256(A) 申请公布日期 2000.06.27
申请号 US19980207158 申请日期 1998.12.07
申请人 KLA INSTRUMENTS CORPORATION 发明人 BAREKET, NOAH
分类号 G01Q30/04;G03F7/20;H01L21/66;H01L23/544;(IPC1-7):G01B5/28;G01B7/34 主分类号 G01Q30/04
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