Method for fabricating a DRAM cell capacitor including forming a conductive storage node by depositing and etching an insulative layer, filling with conductive material, and removing the insulative layer

摘要

Disclosed is an improved method for fabricating a DRAM cell capacitor. The method includes the steps of depositing a first insulating layer over a semiconductor substrate having a field effect transistor, etching the first insulating layer and forming a contact hole therein to one of two source/drain areas of the field effect transistor, filling the contact hole with a first conductive layer thereby to form a contact plug, depositing a thin second conductive layer and a relatively thick second insulating layer on the contact plug and the semiconductor substrate, etching the second insulating layer using a capacitor mask and forming an opening in the second insulating layer to the second conductive layer at a position opposite to underlying the contact plug, filling the opening with a third conductive layer thereby to form a storage node pattern, removing the second insulating layer outside of the storage node pattern, etching the second conductive layer until the first insulating layer outside of the storage node pattern is exposed thereby to form a storage node.