发明名称 |
Nitride semiconductor light emitting device |
摘要 |
A luminous intensity of a semiconductor light emitting device having a multi-layer structure formed of nitride group III-V compound semiconductors is improved by having a thickness d of a light emitting layer (active layer) of the semiconductor light emitting device having a multi-layer structure formed of nitride group III-V compound semiconductors ranging from 0.3 nm to 1.5 nm.
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申请公布号 |
US6081001(A) |
申请公布日期 |
2000.06.27 |
申请号 |
US19970815205 |
申请日期 |
1997.03.12 |
申请人 |
SONY CORPORATION |
发明人 |
FUNATO, KENJI;ASATSUMA, TSUNENORI;KAWAI, HIROJI |
分类号 |
H01L33/06;H01L33/12;H01L33/32;H01S5/00;H01S5/323;H01S5/343;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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