发明名称 Integration of low-k polymers into interlevel dielectrics using controlled electron-beam radiation
摘要 A process for the preparation of substrates used in the manufacture of integrated circuits wherein spin-on low dielectric constant (low-k) polymer films are applied on semiconductor substrates. A non-etchback processing of spin-on low-k polymer films, without losing the low dielectric constant feature of the film, especially in between metal lines, is achieved utilizing electron beam radiation. A polymeric dielectric film is applied and dried onto a substrate and exposed to electron beam radiation under conditions sufficient to partially cure the dielectric layer. The exposing forms a relatively more hardened topmost portion of the dielectric layer and a relatively less hardened underlying portion of the dielectric layer.
申请公布号 US6080526(A) 申请公布日期 2000.06.27
申请号 US19980028465 申请日期 1998.02.24
申请人 ALLIEDSIGNAL INC. 发明人 YANG, JINGJUN;FORESTER, LYNN;CHOI, DONG KYU;WANG, SHI-QING;HENDRICKS, NEIL H.
分类号 C08J3/28;G03F7/26;H01L21/312;H01L21/316;H01L21/768;(IPC1-7):G03F7/40 主分类号 C08J3/28
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