发明名称 |
Integration of low-k polymers into interlevel dielectrics using controlled electron-beam radiation |
摘要 |
A process for the preparation of substrates used in the manufacture of integrated circuits wherein spin-on low dielectric constant (low-k) polymer films are applied on semiconductor substrates. A non-etchback processing of spin-on low-k polymer films, without losing the low dielectric constant feature of the film, especially in between metal lines, is achieved utilizing electron beam radiation. A polymeric dielectric film is applied and dried onto a substrate and exposed to electron beam radiation under conditions sufficient to partially cure the dielectric layer. The exposing forms a relatively more hardened topmost portion of the dielectric layer and a relatively less hardened underlying portion of the dielectric layer.
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申请公布号 |
US6080526(A) |
申请公布日期 |
2000.06.27 |
申请号 |
US19980028465 |
申请日期 |
1998.02.24 |
申请人 |
ALLIEDSIGNAL INC. |
发明人 |
YANG, JINGJUN;FORESTER, LYNN;CHOI, DONG KYU;WANG, SHI-QING;HENDRICKS, NEIL H. |
分类号 |
C08J3/28;G03F7/26;H01L21/312;H01L21/316;H01L21/768;(IPC1-7):G03F7/40 |
主分类号 |
C08J3/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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