| 摘要 |
A semiconductor film deposited on a substrate has regions of different thermal conductivity. A pulsed laser radiation is applied to the semiconductor film to melt the semiconductor film. When the melted semiconductor film is cooled and solidified, localized low-temperature regions are developed in the respective regions of different thermal conductivity. Crystal nuclei are produced in the respective localized low-temperature regions and grown into a single semiconductor crystal. The regions of different thermal conductivity are formed in the semiconductor film by high-thermal-conductivity members deposited on the semiconductor film in thermally coupled relationship thereto. A semiconductor device is fabricated using the semiconductor film and has channels disposed in the vicinity of the crystal nuclei.
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