Integrated nitrogen-treated titanium layer to prevent interaction of titanium and aluminum

摘要

The present invention generally provides a method for processing a substrate having exposed surfaces of titanium and/or silicon prior to deposition of aluminum. The substrate is positioned adjacent a process zone which provides a nitrogen plasma so that exposed areas of titanium and silicon on the substrate are stuffed with nitrogen to form titanium nitride (TiN) and various compounds of silicon and nitrogen (SixNy), respectively. The nitrogen treated surfaces, i.e, TiN and silicon/nitrogen compounds, are resistant to interaction with aluminum. In this manner, the formation of electrically insulating TiAl3 and/or the spiking of silicon is reduced or eliminated.