Method for manufacturing DRAM capacitor

摘要

A method for manufacturing a DRAM capacitor is provided to form a lower electrode with a cylindrical profile by using a first stage and a second stage. The stages provide different etching rates in various situations. The invention uses the stages to allow the part of the second polysilicon layer between the capacitors to be completely etched and prevent the other part of the second polysilicon layer serving as a lower electrode from over-etching. The invention provides an easier process of forming a cylindrical capacitor with a larger surface.