发明名称 |
Cell plate voltage generator of a semiconductor memory device |
摘要 |
A cell plate voltage generator of a semiconductor memory device for selectively providing a cell plate potential having various voltages to thereby substantially reduce the time required for a burn-in test includes a half Vdd generation block for producing a half voltage having a half of an external potential inputted from outside of the semiconductor memory device; a Vbb generation block for generating a negative voltage; a cell plate voltage selection block for generating a plurality of control signals; a transmission block having a plurality of transmission circuits for delivering selectively the half voltage, the negative voltage, the source voltage, and the ground voltage in accordance with the control signals; and a level shifter for level shifting at least two of the control signals in order to avert the voltage drop in threshold voltages of the transmission circuits.
|
申请公布号 |
US6081459(A) |
申请公布日期 |
2000.06.27 |
申请号 |
US19980095576 |
申请日期 |
1998.06.11 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
KIM, SANG SOO |
分类号 |
G11C5/14;(IPC1-7):G11C16/04 |
主分类号 |
G11C5/14 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|