| 摘要 |
The method for etching an organic anti-reflective coating (ARC) film includes the steps of forming an ARC film on an etching-objective layer, coating a photoresist layer on the organic ARC film, patterning the photoresist layer, and etching the organic ARC film with the photoresist pattern as a mask using a plasma of a gas mixture of O2 and SO2. The SO2 prevents erosion of the patterned photoresist layer.
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