| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma CDV device small in the generation of foreign matters at the time of film formation and capable of increasing the working ratio by efficiently removing deposits formed on the inner wall face of a reaction chamber or the like and causing detects in the production by the peeling thereof. SOLUTION: This device is provided with a reaction chamber formed so as to be surrounded by a reaction chamber 1 and a supporting stand 4 in the reaction chamber, and by generating microwave plasma in the reaction chamber and impressing high frequency on the supporting stand, a thin film is formed on an object 5 on the supporting body. The reaction chamber is formed of a conductively integrated upper chamber 2 and a lower chamber 3 combined to the upper chamber so as to be electrically insulated by an insulating member 10, and also, while the upper chamber can be earthed at film formation, high frequency can be impressed on the upper chamber when cleaning. |
