发明名称 UNIT FOR PLASMA TREATING DEVICE
摘要 PROBLEM TO BE SOLVED: To perform the effective utilization of gas feed and the stabilization of plasma discharge and thereby to improve film forming characteristics. SOLUTION: In a unit for a plasma treating device in which reactive gas is brought into decomposition reaction with plasma, and plasma treatment such as film forming or the like is executed to the surface of a substrate set to a heater for substrate heating, it has a boxy plasma treating unit cover 13 in which the side of the substrate is opened and, a plasma electrode 14 arranged within the plasma treating unit cover 13, so as to confront with the substrate 12 and a gas feeder 15 for feeding gas to the substrate 12, and the clearance between the plasma electrode 14 and the plasma treating unit cover 13 is set to 15 to 20 mm.
申请公布号 JP2000178747(A) 申请公布日期 2000.06.27
申请号 JP19980361091 申请日期 1998.12.18
申请人 MITSUBISHI HEAVY IND LTD 发明人 OGAWA KAZUHIKO;SASAGAWA EISHIRO
分类号 C23C16/50;C23C16/505;C23C16/509;(IPC1-7):C23C16/505 主分类号 C23C16/50
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