发明名称 |
Method and arrangement for the response analysis of semiconductor materials with optical excitation |
摘要 |
The invention is directed to a method and an arrangement for the response analysis of semiconductor materials with optical excitation. The object of the invention, to find a new type of response analysis of semiconductor materials with optical excitation which also allows a sufficiently precise detection of the charge carrier wave with a higher excitation output and a shorter charge carrier lifetime, is met according to the invention in that an exciting laser beam is intensity-modulated with two discrete modulation frequencies ( OMEGA 1; OMEGA 2), the luminescent light exiting from the object is measured on the difference frequency ( OMEGA 1- OMEGA 2), and the luminescent light is analyzed as a function of the arithmetic mean ( OMEGA ) of the modulation frequencies ( OMEGA 1; OMEGA 2). The invention is applied in the semiconductor industry for determining different electrical parameters of semiconductor materials.
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申请公布号 |
US6081127(A) |
申请公布日期 |
2000.06.27 |
申请号 |
US19960615427 |
申请日期 |
1996.03.14 |
申请人 |
LEICA MICROSYSTEMS WETZLAR GMBH |
发明人 |
WAGNER, MATTHIAS;GEILER, HANS-DIETER |
分类号 |
G01J3/28;G01N21/63;G01N21/64;G01R31/265;G01R31/28;H01L21/66;(IPC1-7):G01R31/28;G01R31/308 |
主分类号 |
G01J3/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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