CVD film forming method including annealing and film forming performed at substantially the same pressure

摘要

A CVD film forming method, includes the steps of placing a silicon wafer on a susceptor equipped with a heating member therein which is, situated in a chamber, evacuating the chamber, pre-annealing the silicon wafer while keeping pressure in the chamber substantially constant by supplying an anneal gas and a purge gas into the chamber and while exhausting gases from the chamber at a fixed rate, and heating the silicon wafer, there forming a metal film on the silicon wafer by CVD while keeping pressure in the chamber substantially constant by supplying a process gas into the chamber along with a purge gas with a controllable total supply rate while exhausting these gases from the chamber at a fixed rate, and heating the silicon wafer by the heating member, to follow immediately after the pre-annealing step, and then after-annealing the silicon wafer by heating the silicon wafer while maintaining pressure in the chamber substantially constant, by stopping supply of the process gas, supplying an anneal gas and a purge gas into the chamber by controlling the total rate of supplying these gases while and exhausting these gases from the chamber, to follow immediately after the film forming step. The film is one of a titanium nitride film, a titanium film and an aluminum film.