Method and device for analog programming of flash EEPROM memory cells with autoverify

摘要

A device for analog programming is disclosed. The device comprises a current mirror circuit connected to drain terminals of a cell to be programmed and of a MOS reference transistor. An operational amplifier has inputs connected to the drain terminals of the cell and respectively of the MOS transistor and an output connected to the control terminal of the MOS transistor. During programming, the control and drain terminals of the cell are biased at corresponding programming voltages and the output voltage of the operational amplifier, which is correlated to the current threshold voltage level of the cell, is monitored and the programming is interrupted when this output voltage becomes at least equal to a reference voltage correlated to the threshold value desired for the cell.