| 发明名称 |
Semiconductor device containing P-HDP interdielectric layer |
| 摘要 |
Void formation is avoided without thermal treatment by a gap filling between electrically conductive elements such as stacked gates which are formed atop of isolation regions, with an oxide layer using a HDP technique. The oxide layer is doped with phosphorus to getter mobile ionic contaminants.
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| 申请公布号 |
US6080639(A) |
申请公布日期 |
2000.06.27 |
| 申请号 |
US19980199265 |
申请日期 |
1998.11.25 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
HUANG, RICHARD J.;CHANG, CHI |
| 分类号 |
H01L21/316;H01L21/762;H01L21/8247;(IPC1-7):H01L21/76;H01L21/476 |
主分类号 |
H01L21/316 |
| 代理机构 |
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