| 摘要 |
The present invention discloses both an n+ and a p+ unipolar, three-terminal, resonant-tunneling transistor that can be operated as a hot-electron transistor or a field effect transistor at temperatures at least as low as 77 degree Kelvin. The doped first terminal (collector or gate) is made of 3D metal or semiconductor material. An undoped insulating barrier is deposited on the first terminal. The doped electrically-contacted second terminal (emitter or source), made of a 2D semiconductor material, is deposited on the insulating barrier. An undoped double-barrier resonant-tunneling structure is deposited on the second terminal. A doped third terminal, made of 3D metal or semiconductor material, is deposited on a portion of the double-barrier resonant-tunneling structure. A doped tunneling-contact, made of 3D metal or semiconductor material, is deposited on the double-barrier resonant-tunneling structure so that the tunneling contact is isolated from the third terminal. At a temperature of at least as low as 77 degrees Kelvin, dc current gain between the third terminal and the tunneling-contact is observed when a bias voltage or current is applied to the first terminal. With a bias applied to the first terminal, majority carriers from the tunneling-contact tunnel through the double-barrier resonant-tunneling structure to the second terminal. The majority carriers propagate along the second terminal and tunnel through the double-barrier resonant-tunneling structure to the third terminal.
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