发明名称 |
Semiconductor device comprising MIS transistor with high concentration channel injection region |
摘要 |
A gate insulating film and gate electrodes are formed on a substrate containing N-type impurities such as P or As. Under the gate insulating film is a gate region on both sides of which are a first and a second source drain region. The gate region is furnished in its central part with a high-concentration channel injection region containing N-type impurities at a concentration higher than that of the substrate. Between the high-concentration channel injection region on the one hand and the first and the second source drain region and on the other hand, there are formed a first and a second low-concentration channel injection region and having substantially the same impurity concentration as that of the substrate.
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申请公布号 |
US6081007(A) |
申请公布日期 |
2000.06.27 |
申请号 |
US19990226162 |
申请日期 |
1999.01.07 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MATSUOKA, TAKERU |
分类号 |
H01L29/78;H01L21/336;H01L29/10;(IPC1-7):H01L29/76;H01L29/80;H01L27/148 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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