发明名称 GROWING OF CRYSTAL
摘要 PROBLEM TO BE SOLVED: To grow a crystal at a lower temperature and to obtain a good quality large crystal by charging a crystal raw material together with a solvent having a low melting point, into a growth vessel, heating the contents of the growth vessel to dissolve the crystal raw material into the solvent and thereafter supersaturating the resulting solution to grow a crystal. SOLUTION: This method comprises: receiving a mixture of a crystal raw material and a molten solvent in an ampoule and closing the ampoule; then, setting the ampoule within a vertical furnace and heating the ampoule to completely dissolve the crystal raw material into the molten solvent in a molten liquid state; cooling the upper end of the ampoule to a temperature lower than the condensation temperature of vapor of the molten solvent while maintaining the lower part of the ampoule at a temperature at which the molten solvent is evaporated from the solution, to reduce the molten solvent content of a portion of the solution, being in the lower part of the ampoule, to supersaturate the portion of the solution with the objective crystal component, to crystallize a crystal and to grow the objective crystal, wherein as the molten solvent, any molten solvent can be used irrespective of its kind, provided that it is a solid at room temperature (15 deg.C) and, in its molten liquid state, capable of dissolving a crystal raw material to be used, and also, has a melting point lower than that of the objective crystal to be grown, however, a molten solvent having a 30-500 deg.C melting point, such as naphthalene, anthracene or tetracene, can preferably be used.
申请公布号 JP2000178094(A) 申请公布日期 2000.06.27
申请号 JP19980354099 申请日期 1998.12.14
申请人 FUJI XEROX CO LTD 发明人 SHIMIZU MASAAKI;MIYAHARA TOMOKO
分类号 C30B9/00;C09B67/48;C09B67/50;C30B29/54;(IPC1-7):C30B9/00 主分类号 C30B9/00
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