| 摘要 |
PROBLEM TO BE SOLVED: To provide a temp. monitor with a simple structure which can accurately detect an abnormal temp. state or the like in the chamber of a film forming device. SOLUTION: A semiconductor wafer 20 for temp. monitoring instead of a semiconductor wafer 14 for film forming is inserted and disposed on a heat stage 12 in a chamber 10, and heated to measure temp. The semiconductor wafer 20 is produced by successively forming a first titanium layer 24, aluminum layer 26, and second titanium layer 28 on a base substrate 22. A four-terminal probe sheet resistometer is set between titanium layers 24, 28 of the semiconductor wafer 20 to measure temp. A calibration curve is preliminarily obtd. by measuring the resistance at plural sample temps. with a sampling semiconductor wafer 20. When temp. monitoring is practically required, the semiconductor wafer 20 for measurement is used to measure, and the temp. is calculated from the calibration curve.
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