AlAs oxide insulating layer between a conductive III-V substrate and an optoelectronic semiconductor device and method of manufacturing thereof

摘要

PCT No. PCT/DE97/02038 Sec. 371 Date Sep. 14, 1998 Sec. 102(e) Date Sep. 14, 1998 PCT Filed Sep. 11, 1997 PCT Pub. No. WO98/13864 PCT Pub. Date Apr. 2, 1998An optoelectronic semiconductor device, whereby at least one functional semiconductor structure is arranged on a II-V semiconductor substrate. Inventively, an electrically conductive III-V semiconductor substrate is provided that exhibits a charge carrier concentration of more than 1*1015 cm-3. At least one electrically insulating oxide layer is provided between the functional semiconductor structure and the III-V semiconductor substrate.