APPARATUS FOR PROCESSING SEMICONDUCTOR SUBSTRATES AND PROCESSING METHOD

摘要

PURPOSE: A plasma processing apparatus and method thereof are provided to minimize particles in chamber and improve an operation rate by restraining a stripping of coated film or attached material. CONSTITUTION: In a plasma processing apparatus(10), surroundings of an upper electrode(14)and a lower electrode(16) are arranged to an upper and a lower quartz jigs(18,20), respectively. The lower quartz jig(20) further includes a stepped processing part(30) formed at inner edge portions of the lower quartz jig(20). The stepped processing part(30) has a rectangular platform(30a). The upper quartz jig(18) includes also a stepped processing part(30) formed at inner edge portions of the upper quartz jig(18). The stepped processing part(30) also has a rectangular platform(30a). Preferably, the stepped processing part(30) has concave and convex patterns composed of the rectangular platform(30a).