| 摘要 |
PURPOSE: A chemical vapor deposition(CVD) apparatus is provided to improve a film formation efficiency and a film quality by using a desirable material in each of two CVD processes having different film formation conditions in order to form a film. CONSTITUTION: A CVD apparatus comprises gate values(17) which are installed between a guide module(11) and each module(12-16), respectively. A guide robot(18) is installed in a chamber of the return module(11). The modules disposed around the guide module(11) comprises two load/unload lock modules(12,13), a previous heating module(14), and first and second CVD modules(15,16). The first and second CVD modules(15,16) have a film formation chamber, respectively. The first CVD module(15) forms a copper film used as lower layer by use of a raw material such as Cu(hfac)(tmvs) family whose film formation velocity is slow and which is contained in a container(32). The second CVD module(16) thickens a thickness of the copper film by use of a raw material such as Cu(hfac)(tmvs) family whose film formation velocity is speedy and which is contained in a container(32).
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