| 摘要 |
PURPOSE: A non volatile semiconductor memory device is provided to be capable of setting a plurality of erase units in one NAND cell block. CONSTITUTION: A non volatile semiconductor memory device comprises a plurality of NAND cells which are connected to corresponding bit lines(BL0-BL4223) and form a NAND cell block(1). Each of the NAND cells consists of three select transistors(SST,GST,ST) and 32 memory transistors(MC0-MC31). The select transistor(SST) is connected between a corresponding bit line and the memory transistor(MC0), and the select transistor(GST) is connected between the memory transistor(MC31) and a source line(SL). The select transistor(ST) is to divide the NAND cell into two sections, and is connected between the memory transistors(MC15,MC16).
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