SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE: A semiconductor integrated circuit device is provided to improve the operation of the semiconductor integrated circuit device without increasing the size of masks. CONSTITUTION: A semiconductor integrated circuit device includes a PMOS transistor, an NMOS transistor, gates and diffusion layers for the PMOS transistor and the NMOS transistor, a contact hole(24). The PMOS transistor is formed in an N-type well(31). The NMOS transistor is formed in a P-type well(32). The contact hole(24) couples the gates and diffusion layers with metal wiring. In the contact hole(24), a conduction material is injected. At least a part of the plurality of contact holes(24) further include lines of same length with each other.