发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE: A semiconductor integrated circuit is provided to improve exchange efficiency of a defect exchange such as a defect repair. CONSTITUTION: A semiconductor integrated circuit comprises a central processing unit(1), anon volatile memory(11) and a volatile memory(12) which are integrated in a single semiconductor substrate. The non volatile memory(11) is accessed by the central processing unit(10), and is capable of being changed electrically. The volatile memory(12) is accessed by the central processing unit(10), and has a plurality of normal volatile memory cells and a plurality of redundant volatile memory cells. The volatile memory(12) is configured to latch repair information for repairing a defective normal memory cell with a corresponding redundant memory cell. A part of the non volatile memory cells are constituted of memory cells for storing repair information of the non volatile memory cells together with the repair information of the volatile memory cells. The repair information is read out from the non volatile memory cells on the basis of initialization directions to the semiconductor integrated circuit. The repair information read out from the non volatile memory cells is latched in a repair address register(12AR) of the volatile memory(12).
申请公布号 KR20000035149(A) 申请公布日期 2000.06.26
申请号 KR19990048087 申请日期 1999.11.02
申请人 HITACHI.LTD. 发明人 HIRAKI MITSURU;SHUKURO SHOUJI
分类号 G11C11/413;G06F15/78;G11C11/401;G11C16/00;G11C16/02;G11C16/06;G11C29/04;H01L21/8247;H01L27/10;H01L27/115;(IPC1-7):G11C16/00 主分类号 G11C11/413
代理机构 代理人
主权项
地址