发明名称 |
MODULE TYPE SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A module type semiconductor device is provided to prevent the degeneration loss of solder due to a temperature cycles, and to increase fidelity of the semiconductor device. CONSTITUTION: A module type semiconductor device includes an insulation ceramic layer(1),a first and a second conduction layer(2,3), a semiconductor device(5). and a base of thermal conductor(7a). The first conduction layer(2) is attached on one side of the insulation ceramic layer(1). The second conduction layer(3) is attached on the other side of the insulation ceramic layer(1). The semiconductor device(5) is attached on the first ceramic layer(1). The base of thermal conductor(7a) is attached on the second conduction layer(3) by way of a solder(6a). The thickness of the base of thermal conductor(7a) is tb. The thickness of the solder(6a) is ts. The ratio of the tb to ts(tb/ts) is in the range of 6.7 to 80. |
申请公布号 |
KR20000035180(A) |
申请公布日期 |
2000.06.26 |
申请号 |
KR19990048280 |
申请日期 |
1999.11.03 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TANAKA, AKIRA;YAMAMOTO, ATSUSI;GUSANO, TAKASI;NISIMURA, DAKANOBU;ARAKI, GOUZI;HUKUYOSI, HIROSI;ISIWATA, YUTAKA;OKUTOMI, TSUTOMU |
分类号 |
H01L23/12;H01L23/373;H01L23/40;H01L23/58;H05K1/03;H05K3/00;H05K3/34;(IPC1-7):H01L23/58 |
主分类号 |
H01L23/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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