| 摘要 |
PURPOSE: A memory device is provided to have a pair of conductors which are spaced apart from each other with a ferroelectric material interposed therebetween. CONSTITUTION: A memory device comprises a first electrode(1), a second electrode(2) and a ferroelectric material(3). The ferroelectrice material(3) is interposed between the first electrode(1) and the second electrode(2). The first and second electrodes(1,2) are spaced sufficiently to allow tunneling current between the electrodes(1,2). Each of the first and second conductors(1,2) comprises a metal selected from a group of Al, Au, Ag, Cu and an alloy of Al, Au, Ag and Cu.
|
