发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME |
摘要 |
PURPOSE: A semiconductor device is provided to have a trench isolation structure which has high reliance. CONSTITUTION: In a semiconductor device having a trench isolation structure, after a trench surface is selectively oxidized by a conventional method, an oxidation prevention film is removed, the entire surface of the substrate is again oxidized while only an oxide film on the substrate or trench surface is exposed, and a radius of curvature is provided to the shape of the oxide film near the trench upper end portion.
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申请公布号 |
KR20000036123(A) |
申请公布日期 |
2000.06.26 |
申请号 |
KR19997002156 |
申请日期 |
1999.03.13 |
申请人 |
HITACHI LTD. |
发明人 |
MIURA, HIDEO;KITANO, MAKOTO;IKEDA, SHUJI;SUZUKI, NORIO |
分类号 |
H01L21/76;H01L21/762;(IPC1-7):H01L21/762 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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