发明名称 SEMICONDUCTOR WAFER AND METHOD FOR FABRICATION THEREOF
摘要 PURPOSE: A method for fabricating a semiconductor wafer wherein grinding striations are eliminated is provided to improve quality of the front surface of the wafer, and the back surface having a quality suitable for the device process. CONSTITUTION: A semiconductor wafer is obtained by removing a mechanical damage layer by etching both surfaces of the wafer, flattening one of the surfaces by a surface-grinding unit, polishing both of the surfaces, and then subjecting a front surface of the wafer to a finishing mirror-polishing when defining the surface subjected to surface-grinding as a back surface of the wafer.
申请公布号 KR20000035712(A) 申请公布日期 2000.06.26
申请号 KR19990052882 申请日期 1999.11.26
申请人 SHINETSU HANDOTAI KK 发明人 KISHIMOTO JUN
分类号 H01L21/306;H01L21/304;(IPC1-7):H01L21/304 主分类号 H01L21/306
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