发明名称 |
THERMOELECTRIC SEMICONDUCTOR MATERIAL, MANUFACTURE PROCESS THEREFOR, AND METHOD OF HOT FORGING THERMOELECTRIC MODULE USING THE SAME |
摘要 |
PURPOSE: A thermoelectric semiconductor material is provided to have sufficient strength and performance and high production yield. CONSTITUTION: The thermoelectric semiconductor material is characterized in that asintered powder material of a thermoelectric semiconductor having a rhombohedral structure (or hexagonal structure) is hot-forged and plastically deformed to direct either the crystals of the sintered powder structure or the quasi crystals constructing the crystals in a crystal orientation having an excellent performance index.
|
申请公布号 |
KR20000036119(A) |
申请公布日期 |
2000.06.26 |
申请号 |
KR19997002147 |
申请日期 |
1999.03.13 |
申请人 |
KOMATSU ELECTRONICS INC. |
发明人 |
FUKUDA, KATSUSHI;SATO, YASUNORI;KAJIHARA, TAKESHI |
分类号 |
H01L35/16;H01L35/34;(IPC1-7):H01L35/34 |
主分类号 |
H01L35/16 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|