发明名称 THERMOELECTRIC SEMICONDUCTOR MATERIAL, MANUFACTURE PROCESS THEREFOR, AND METHOD OF HOT FORGING THERMOELECTRIC MODULE USING THE SAME
摘要 PURPOSE: A thermoelectric semiconductor material is provided to have sufficient strength and performance and high production yield. CONSTITUTION: The thermoelectric semiconductor material is characterized in that asintered powder material of a thermoelectric semiconductor having a rhombohedral structure (or hexagonal structure) is hot-forged and plastically deformed to direct either the crystals of the sintered powder structure or the quasi crystals constructing the crystals in a crystal orientation having an excellent performance index.
申请公布号 KR20000036119(A) 申请公布日期 2000.06.26
申请号 KR19997002147 申请日期 1999.03.13
申请人 KOMATSU ELECTRONICS INC. 发明人 FUKUDA, KATSUSHI;SATO, YASUNORI;KAJIHARA, TAKESHI
分类号 H01L35/16;H01L35/34;(IPC1-7):H01L35/34 主分类号 H01L35/16
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