| 摘要 |
PURPOSE: A semiconductor device and a method for manufacturing the semiconductor device are provided for a multilayer structure with minimized chip size. CONSTITUTION: A semiconductor device includes a lowest wiring layer(18), uppermost wiring layer(28), and at least one intermediate wiring layer(24). The lowest wiring layer(18) and the uppermost wiring layer(28) are coupled on the current path. The current path includes a conductor plug(34) wiring over the at least one intermediate wiring layer(24). The conductor plug(34) further is made of a conductor membrane in a connection hole formed on an insulator covering the lowest wiring layer(18) and the intermediate wiring layer(24), and the conductor plug(34) is manufactured by pressing the conductor plug(34) with high pressure. |
