INTEGRATED CIRCUIT FABRICATION

摘要

PURPOSE: An integrated circuit fabrication is provided to solve the problem of the conventional plasma etching apparatus that liberated oxygen degrades etching uniformity across the wafer. CONSTITUTION: A method of fabricating an integrated circuit includes the steps of surrounding the wafer with a shadow ring, prior to placing a wafer in the vicinity of a plasma for etching. The shadow ring having at least an upper surface which is incapable of liberating sufficient oxygen to significantly alter the plasma's etching properties. Polyimide is suitable for covering the upper surface of the shadow ring.