| 摘要 |
PURPOSE: A method for producing trenches and a silicon board are provided to make side walls of the trench be more spaced from the exposed surface using STI process. CONSTITUTION: A method for producing trenches and a silicon board includes a first to a third step. The trench(18) includes side walls(24,26,28,30) and a bottom(21) in a tapered shape on a silicon board(1) with an exposed surface(8). At the first step, the trench(18) with the side walls(24,26,28,30) and the bottom(21) are formed. At the second step, a nitride ion(50) is injected in the side walls(24,26,28,30) of the trench(18). More nitride ions are injected around the exposed plane(8) than around the bottom(21) of the trench(18). At the third step, the side walls(24,26,28,30) of the trench(18) are oxidized to form the trench(18) with a tapered shape.
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