| 摘要 |
PURPOSE: A method for producing semiconductor device is provided to prevent a W pattern from being decayed after the W pattern is formed by a dry etching in the semiconductor production operation. CONSTITUTION: A method for producing semiconductor device include a first and a second step. The semiconductor device includes conduction pattern of the first and second layers. The first layer of the conduction pattern includes Ti. The second layer of the conduction pattern is formed on the first layer and contains W. At the first step, the conduction pattern is patterned by a dry etching. At the second step, the conduction pattern is exposed in a plasma containing O. The conduction pattern is further exposed in a plasma containing H.
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