| 摘要 |
PURPOSE: An integrated circuit structure with dual thick cobalt silicide layer and a method for producing thereof are provided to form the silicide layer with a controllable thickness on a predetermined region of an integrated circuit. CONSTITUTION: An integrated circuit structure with dual thick cobalt silicide layer and a method for producing thereof include the first thru the sixth step. At the first step, an IC structure of a plurality of MOS transistor structure with exposed silicon surface is provided. At the second step, a cobalt layer is deposited on the IC structure. At the third step, a titanium capping layer is deposited on the cobalt layer. At the forth step, the titanium capping layer on a predetermined region is patterned. At the fifth step, a thick cobalt silicide layer is formed on a predetermined region of the IC structure, and a thin cobalt silicide layer is formed on other region of the IC structure. At the sixth step, remove the patterned titanium capping layer and a cobalt remained without reaction.
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