| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to suppress a decrease of a hemi-spherical grained silicon, to prevent the hemi-spherical grained silicon from being depleted, and to maintain the capacitance of a capacitor. CONSTITUTION: A method for manufacturing a semiconductor device includes first thru fifth steps. At the first step, a silicon membrane(14) is formed on a semiconductor substrate(11). At the second step, a hemi-spherical grained silicon is formed on the surface of the silicon electrode(14) by treating the silicon electrode(14) by heat in a gas atmosphere including silicon. At the third step, a phosphorous is diffused to a hemi-spherical grained silicon in a complex gas atmosphere including halogen and phosphorous gas and an oxygen in a diffuser(19). At the forth step, The heat treatment in the phosphorous diffuser is performed in a state the accelerated oxidization not occurs.
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