| 摘要 |
PROBLEM TO BE SOLVED: To reduce the resistance between the gate and source electrodes to make the high frequency characteristics superior by forming a source electrode on the opposite surface of a carrier run layer to its surface on which a gate electrode is formed. SOLUTION: A field effect transistor 100 comprises a gate electrode 105 and a drain electrode 104 laminated on one surface of a carrier run layer 102, and a source electrode 106 laid on the other surface of the run layer 102, so that the source and gate electrodes 106, 105 are opposed and partly overlapped. Owing to this structure, no effect of a depletion layer due to formation of the surface level will arise on the relation between the source and gate electrodes 106 and 105, and the distance between the source and gate electrodes 106 and 105 is shortened. Even in operating the field effect transistor in an enhancement mode, the resistance between the source and gate electrodes 106 and 105 can be reduced to obtain greatly superior characteristics.
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