Manufacture of CMOS transistors comprises engraving an active layer or rendering zones inactive to leave active islands for covering with insulating and conducting layers

摘要

Engraving process comprises etching an active layer or rendering zones of the layer inactive to leave active islands for making sources (12), channels (10) and drains of N-type and P-type transistors. The active islands are covered by an insulating layer (8) e.g. of silicium oxide, covered in turn by a conducting layer (9) of N+ doped polycrystalline silicium, tungsten, molybdenum or aluminum, etched with the transistor grids. The procedure can employ a substrate (4) or glass, plastic or quartz.