| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which a device is isolated by a shallow trench and a deep trench. SOLUTION: This method includes the steps of depositing first masking materials 22, 23 on a semiconductor substrate 20, making openings for device isolating regions in the first masking materials 21, 22, 23, forming first trenches on the semiconductor substrate 20 through the openings, depositing a second masking material 27 on the semiconductor substrate 20 in which the first trenches are formed, etching the first masking materials 21, 22, 23 and the second masking material 27 to make openings in the upper surface of the semiconductor substrate 20 opposed to the bottoms of the first trenches and to form side walls 20 in the first trenches, and forming second trenches 30 through the first trenches by using the side wall 20 as a mask.
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