| 摘要 |
PROBLEM TO BE SOLVED: To provide an exposure accuracy control method and a device, where a double exposure process is carried out changing an optical condition so as to make the accuracy of a position to a practical one. SOLUTION: A wafer 130 where a photoresist film is applied is loaded onto a wafer scan stage 135, a reticle 110 is set on a reticle scan stage 105, the reticle 110 is positioned, and the reticle scan stage 135 is positioned. Then, the wafer 130 is exposed to light under an optical condition suitable for a dense pattern or exposed to 30 to 40% light of a total exposure light. This optical condition is optimized varying it in accordance with the size of a pattern and the kind of resist. Then, cooling is carried out to enable the extended wafer 130 to recover its original size, a lighting optical system is modified, and then the wafer 130 is exposed to light under an optical condition suitable for a rough pattern or exposed to 70 to 60% light of a total exposure light. This condition is optimized varying it in accordance with the size of a pattern and the kind of resist.
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