发明名称 METHOD AND APPARATUS FOR MEASURING ON-RESISTANCE OF POWER MOSFET AND POWER MOSFET
摘要 PROBLEM TO BE SOLVED: To measure a value of an on-resistance highly accurately while sharing a measurement terminal necessary for measuring the on-resistance of a power MOSFET. SOLUTION: Two measurement terminals 12a and 12b are set to a power MOSFET 11, thereby sharing a terminal for measuring a current and for measuring a voltage. When the power MOSFET 11 is in an off-state, a voltage V1, V2 between a source and a drain when a current running in a forward direction to a parasitic diode 11a formed between the source and drain is 11, I2 is measured. Then, in an on-state of the power MOSFET 11, a voltage V between the source and drain when a drain current is I is measured. An on resistance value RON is obtained by calculations from these measurement results. The on-resistance value RON is measured highly accurately with influences of a contact resistance 13 being eliminated.
申请公布号 JP2000171517(A) 申请公布日期 2000.06.23
申请号 JP19980346931 申请日期 1998.12.07
申请人 DENSO CORP 发明人 UEDA NOBUTADA;NASU TADASHI;ABE HIROBUMI
分类号 G01R31/26;G01R27/02;H01L21/66;(IPC1-7):G01R31/26 主分类号 G01R31/26
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