| 摘要 |
<p>PROBLEM TO BE SOLVED: To facilitate chip-formation by a method, wherein an active layer is formed on an n-GaN clad layer, and a p-GaN clad layer, a connection layer, and a conductive substrate are sequentially formed thereon, and a first electrode is formed on the conductive substrate, and at the same time a second electrode is formed on a part of the n-GaN clad layer. SOLUTION: A GaN buffer layer 13 is formed on a sapphire substrate 14, and a double heterostructure is formed which comprises an n-GaN clad layer 11, an InGaN active layer 10, and a P-GaN clad layer 9 on the GaN buffer layer 13. An Au connection layer 8 is formed through a vapor-deposition method on the P-GaN clad layer 9, and is closely adhered to the Au connection layer 8 in a pressurized state, annealed, so that GaAs conductive substrates 7 are stuck to each other. Thereafter, a sapphire substrate 14 and a GaN buffer layer 13 are removed to form an n electrode 1 in a part of the n-GaN clad layer 11 exposed, and also a p-electrode 4 is formed on the GaAs conductive substrate 7.</p> |
