| 摘要 |
PROBLEM TO BE SOLVED: To execute correction of the proximity effect, which is in accord with the theory and can be easily realized, by a method wherein an exposure intensity distribution function which includes the out-of-focussing of an electron beam as a variable, is used as the exposure intensity distribution function. SOLUTION: An exposure pattern to respond to each manufacturing process of an LSI is decided based on data, which is one on the LSI to be manufactured and is created by a CAD tool or the like, and this exposure pattern is divided into a plurality of shots, a pattern for performing a partial one-shot exposure is extracted. Then, first, uncorrected exposure data are prepared, then a correction of the proximity effect is applied for the uncorrected exposure data using the variation the pattern size variations of an electron beam due to Coulomb force, aberrations and the like, that is, a double Gaussian or triple Gaussian exposure intensity distribution function including the out-of-focussing of beamδof the electron beam as a variable and an electron beam exposure is performed based on the finished corrected exposure data.
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