| 摘要 |
PROBLEM TO BE SOLVED: To provide a MOS hetero structure wherein structure defects in semiconductor substrates are decreased, or no structure transition layer exists near an interface between an insulation film on a semiconductor substrate and the semiconductor substrate. SOLUTION: After a plurality of steps 10a and a plurality of terraces 10b are formed on a silicon substrate 10 by re-arraying silicon atoms on the surface thereof, thermal oxidation is performed for the surface of the silicon substrate 10 while the surface is prevented from being contaminated, so that a crystalline silicon dioxide, that is, a crystalline oxide 11 is epitaxially grown on the step 10a. By further epitaxially growing the crystalline oxide 11 along the surface of the terrace 10b, a crystalline oxide film 12 which continues two-dimensionally on the silicon substrate 10 is formed. A gate electrode 13 is formed over the silicon substrate 10 with a gate insulation film consisting of the crystalline oxide film 12 in between.
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